S3AB [BL Galaxy Electrical]
SURFACE MOUNT RECTIFIER; 表面贴装整流器
| 型号： | S3AB |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SURFACE MOUNT RECTIFIER |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
S3AB - - - S3MB
BL
111REVERSE VOLTAGE: 50 --- 1000 V
CURRENT: 3.0 A
SURFACE MOUNT RECTIFIER
FEATURES
DO - 214AA(SMB)
Plastic package has underwriters laboratory
111 flammabilityclassification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111 250oC/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-
1111750, Method 2026
inch(mm)
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
S3AB S3BB
S3DB S3GB S3JB S3KB S3MB
UNITS
SBB
SAB
SDB SGB
SJB SKB
SMB
Device marking code
Maximumrecurrent peak reverse voltage
Max imum RMS v oltage
VRRM
VRWS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Max imum DC Bloc king Voltage
V
100
1000
DC
Maximumaverage forword rectified current
3.0
IF(AV)
IFSM
VF
IR
A
A
V
V @ T =90OC
L
Peak forward surge current @ T = 110°C8.3ms
L
V single half-sine-wave superimposed on rated
V load(JEDECMethod)
100
1.15
10
MaximumInstantaneous forward voltage at 3.0 A
Max imum DC r ev er se c ur r ent
@TA=25oC
at rated DCblockjing voltage @TA=100oC
Typical junction capacitance
100
35
CJ
pF
oC/W
Typical thermal resitance (NOTE 2)
R JA
40
oC
Operating junction and storage temperature range TJTSTG
-55--------+150
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
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2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number 0280011
1.
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
S3AB - - - S3MB
FIG.1 -- FORWARD DERATING CURVE
FIG.2 PEAK FORWARD SURGE CURRENT
Resistive or inductive
Load
O
TL=110 C
3.0
2.0
8.3ms Single Half Sine Wave
(JEDEC Method)
100
50
1.0
60Hz Resistive or
Inductive load
P.C.B.MOUNTED
0.27''X0.27''(7.0X7.0mm)
THICK COPPERPAND AREAS
0
1
50 60 70 80 90 100 110 120 130 140 150
1
1 0
1 0 0
LEAD TEMPERATURE
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
100
10
10
TJ=125OC
TJ=25OC
1
1
TJ=75OC
0.1
0.1
Puise Width=300
1%DUTY CYCLE
S
TJ=25OC
0.01
0.01
0.4 0.6 0.8
1.0. 1.2
1.4
1.6 1.8 2.0
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
60
40
f=1MHz
TJ=25
20
10
4
2
1
.1
.2
.4
1.0
2
4
10 20
40
100
REVERSE VOLTAGE,VOLTS
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2.
BLGALAXY ELECTRICAL
Document Number 0280011
相关型号：
S3AB-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
WTE
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